VisIC Technologies

VisIC Technologies manufactures high volume and high voltage transistors and switches.

VisIC’s core technology is based the un-doped normally-off gallium nitride (GaN) structure implemented currently on the GaN-on-SiC semiconductor technology. VisIC’s developments are further applicable to GaN-on-Si as well. Unlike silicon (Si) and gallium arsenide (GaAs), GaN, as a wide band-gap material, exhibits superior advantages in all power applications across the switching frequencies from several Hz to hundreds of GHz. This technology was further proven to be superior over other wide band-gap semiconductors, such as pure SiC, by minimizing switching losses and fabrication costs. ​ The company has managed to address innovative processing challenges and to develop its protected IP based on a vast knowhow. VisIC succeeded to overcome major obstacles required for power switching applications by obtaining a GaN transistor with a normally-off behavior (that is, no electrical current flows upon zero bias control voltage) without sacrificing the various benefits of the GaN material, thus ensuring high breakdown voltages and high current densities. Moreover, VisIC’s developed normally-off GaN MOSHEMT exhibits a unique set of performances as:  -Low leakage with Ion/Ioff ratio above 1E6 -Low parasitic capacitances due to undoped epitaxial design -Low specific On resistance which is less than 0.2 Ohm*mm sqr -High blocking voltage that is above 600V -Low cost technology compatible with existing GaN RF and Si CMOS production lines. Based on this same developed technology, VisIC can further manufacture and embed Schottky diodes and normally-on devices on a single die, thus offering the customer a complete GaN power integrated circuit platform. VisIC has further developed a unique device layout sharing a Si-based simplified interconnect technology allowing further size reduction of the chip and manufacture costs. ​ Moreover, VisIC has also developed an innovative packaging approach offering efficient heat dissipation, high reliability during power cycling, compatibility with a standard assembly lines and low cost mass production.